A silicon PN junction diode under revers bias has depletion width of 10µm, relative permittivity is 11.7 and permittivity, ε0 =8.85×10-12F/m. Then depletion capacitance /m2 =?

Semiconductor-Diode topics include: pn junction qualitative theory, p-n junction diode, band structure of open circuited p-n junction, components in p-n junction diode, volt ampere characteristics, diode resistance and capacitances, pn diode switching times, breakdown and tunnel diodes, point contact diode, p-i-n diode and its characteristics. Here are some characteristics of a semiconductor diode: Unidirectional current flow: A semiconductor diode allows current to flow in only one direction, from anode to cathode. Low resistance: Diodes have low resistance to the flow of current. They... Show more

Semiconductor-Diode topics include: pn junction qualitative theory, p-n junction diode, band structure of open circuited p-n junction, components in p-n junction diode, volt ampere characteristics, diode resistance and capacitances, pn diode switching times, breakdown and tunnel diodes, point contact diode, p-i-n diode and its characteristics.

Here are some characteristics of a semiconductor diode:

Unidirectional current flow: A semiconductor diode allows current to flow in only one direction, from anode to cathode.
Low resistance: Diodes have low resistance to the flow of current. They have high resistance at one end and low resistance at the other end.
Current rise: The current rises to a stable voltage, also known as knee voltage, in a linear manner. After reaching this voltage, the current does not follow the linear motion.
Reverse current: The reverse current does not depend on the reverse voltage.
Voltage drop: A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V.

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