On the topic of working with Metal Oxide Semiconductor (MOS) memory devices and Complementary Metal Oxide Semiconductor (CMOS) memory devices, choose the option that best describes which memory device is more sensitive to static-electricity discharges and voltage spikes.

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On the topic of working with Metal Oxide Semiconductor (MOS) memory devices and Complementary Metal Oxide Semiconductor (CMOS) memory devices, choose the option that best describes which memory device is more sensitive to static-electricity discharges and voltage spikes.