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MCQs for Semiconductor Electronics: Materials, Devices and Simple Circuits
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MCQs for Semiconductor Electronics: Materials, Devices and Simple Circuits
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18 Questions

1. If the energy of a photon of sodium light (A = 589 nm) equals the band gap of semiconductor, the minimum energy required to create hole electron pair
2. In a half wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be
3. Region without free electrons and holes in a p-n junction is
4. Semiconductor Electronics Question 19. The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are
5. Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E^)c, (Eg)Si and (Eg)Ge. Which of the following statements is true?
6. In good conducrors of electricity the type of bonding that exist is
7. The probability of electrons to be found in the conduction band of an intrinsic semiconductor of finite temperature
8. If in a n-type semiconductor when all donor states are filled, then the net charge density in the donor states becomes
9. The breakdown in a reverse biased p-n junction diode is more likely to occur due to
10. In an unbiased p-n junction, holes diffuse from the p-region to n-region because
11. If a small amount of antimony is added to germanium crystal
12. In an n-type silicon, which of the following statements is true.
13. Which of the following statements is incorrect for the depletion region of a diode?
14. At absolute zero, Si acts as a
15. The manifestation of band structure in solids is due to
16. What happens during regulation action of a Zener diode?
17. Potential barrier developed in a junction diode opposes the flow of
18. A zener diode is specified as having a breakdown voltage of 9.1 V, with a maximum power dissipation of 364 mW. What is the maximum current the diode can handle?

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