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Electronic Devices and Circuits Practice Test: Field-Effect Transistors
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Avg score: 81% Most missed: “Necessary condition to create a channel in n-channel enhancement MOSFET is _____…”
Field-Effect Transistors topics include: Junction field effect transistor, pinch off voltage, insulated gate, fet small signal model, common source and drain amplifier, fet biasing, fet amplifier and unijunction transistors. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn... Show more
Electronic Devices and Circuits Practice Test: Field-Effect Transistors
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25 Questions

1. What will be the value of trans conductance if two Identical FETs are connected in parallel?
2. What is the relation between the drain current and source current once the voltage crosses pinch off?
3. For a transistor in its circuit symbol, the line between drain and source was broken, what does this indicate?
4. For low value of VDS, the JFET behaves like a __________
5. For a FET having IDSS=2mA Vgs=2V and Vp=-1V, What is the value of source current?
6. What is the value of current when the gate to source voltage is less than the pinch off voltage?
7. Find the value of gm for FET with IDSS=8mA, Vp=4V, VGS=-0.5V?
8. Output Impedance of Common Drain Amplifier is______________
9. How does a FET behave when the v-I characteristics are to the left of pinch off for an n channel FET?
10. Find the maximum value of gm for FET with IDSS=10mA, Vp=-2V, VGS=5V?
11. Find the gate voltage for voltage divider having R1=R2=1KΩ and VDD=5V?
12. What is the maximum value of gain of an amplifier?
13. Which of the following is the main advantage of Self bias?
14. A JFET has ID=10mA, IDSS=1A, Vp=-1v, what is the value of Vgs?
15. Which of the following is the necessary to hold drain current in 0 for n channel E-MOSFET?
16. Which of the following equations gives the relation between ID and Vgs?
17. A Self bias configuration contains RD=3.3, Rs=1 KΩ, RG=1MΩ and gm=1.5mS. Determine Av?
18. What is the main advantage of FET which makes it more useful in industrial applications?
19. Which of the following is the necessary to hold drain current in 0 for p channel E-MOSFET?
20. Two identical FETs, each characterized by the parameters g_m and r_d are connected in parallel .The composite FET is then characterized by the parameters_____________
21. The depletion type MOSFET is equivalent to normally closed switch.
22. A common gate amplifier has _______
23. Comparing the size of BJT and FET, choose the correct statement?
24. Find the current through gate if the FET was given with gate to source voltage =10V and drain to source voltage =20V, the pinch off voltage was -2V and ID=2mA.
25. Find the gate to source voltage for voltage divider having R1=R2=2KΩ and VDD=12V, ID=1mA and RS=4KΩ?