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EE AND ECE - FET ( Field Effect Transistors ) MCQs
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EE AND ECE - FET ( Field Effect Transistors ) MCQs
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25 Questions

1. The channel of a JFET is between the …………….
2. A MOSFET is sometimes called ………. JFET
3. A certain common-source JFET has a voltage gain of 10. If the source bypass capacitor is removed, ……………….
4. The pinch-off voltage in a JFET is analogous to ………. voltage in a vacuum tube
5. The output characteristics of a JFET closely resemble the output characteristics of a ………. valve
6. The transconductance of a JFET ranges from ……………..
7. In a p-channel JFET, the charge carriers are …………..
8. The input impedance of a JFET is …………. that of an ordinary transistor
9. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers ………
10. If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ……….
11. The input control parameter of a JFET is ……………
12. In a JFET, IDSSis known as …………..
13. …………. has the lowest noise-level
14. A common base configuration of a pnp transistor is analogous to ………… of a JFET
15. A MOSFET has …………… terminals
16. A n-channel D-MOSFET with a positive VGSis operating in …………
17. A certain p-channel E-MOSFET has VGS(th)= -2V. If VGS= 0V, the drain current is ……….
18. The pinch-off voltage of a JFET is about ……….
19. A certain D-MOSFET is biased at VGS= 0 V. Its data sheet specifies IDSS= 20mA and VGS(off) = -5 V. The value of the drain current is …………
20. The input impedance of a MOSFET is of the order of ………..
21. A JFET is also called …………… transistor
22. The two important advantages of a JFET are …………..
23. A MOSFET uses the electric field of a ………. to control the channel current
24. In a certain CS JFET amplifier, RD= 1kΩ ,RS= 560Ω ,VDD=10V andgm= 4500μS. If the source resistor is completely bypassed, the voltage gain is …………
25. In a certain common-source D-MOSFET amplifier,Vds=3.2 V r.m. andVgs= 280 mV r.m.s. The voltage gain is …………

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