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Electrical Engineering - Semiconductor Diode MCQs
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Electrical Engineering - Semiconductor Diode MCQs
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25 Questions

1. The ripple factor of a half-wave rectifier is …………………
2. A zener diode has ………..
3. A crystal diode has forward resistance of the order of ……………
4. When the graph between current through and voltage across a device is a straight line, the device is referred to as ……………….
5. A crystal diode has ………
6. If the doping level of a crystal diode is increased, the breakdown voltage………….
7. A series resistance is connected in the zener circuit to………..
8. For the same secondary voltage, the output voltage from a centre-tap rectifier is ………… than that of bridge rectifier
9. The PIV rating of each diode in a bridge rectifier is ……………… that of the equivalent centre-tap rectifier
10. In the breakdown region, a zener didoe behaves like a …………… source.
11. When the crystal current diode current is large, the bias is …………
12. If the PIV rating of a diode is exceeded, ………………
13. If the doping level in a crystal diode is increased, the width of depletion layer………..
14. A zener diode is destroyed if it…………..
15. The ……………….. filter circuit results in the best voltage regulation
16. The doping level in a zener diode is …………… that of a crystal diode
17. If the temperature of a crystal diode increases, then leakage current ………..
18. A zener diode is …………………. device
19. An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.
20. The reverse current in a diode is of the order of ……………….
21. A zener diode has ………….. breakdown voltage
22. The ratio of reverse resistance and forward resistance of a germanium crystal diode is about ………….
23. The knee voltage of a crystal diode is approximately equal to………….
24. A crystal diode is a …………… device
25. When a crystal diode is used as a rectifier, the most important consideration is ………..