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Electronic Devices and Circuits: Frequency response of Small signal Amplifiers
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Electronic Devices and Circuits: Frequency response of Small signal Amplifiers
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25 Questions

1. During high frequency applications of a B.J.T., which parasitic capacitors arise between the base and the emitter?
2. Which parasitic capacitors don'
3. Ignoring early effect, if C1 is the total capacitance tied to the emitter, what is the input pole of a simple C.B. stage?
4. If the total capacitance between the base and the emitter increases by a factor of 2, the transit frequency __________
5. Given that transition capacitance is 5 pico F and diffusion capacitance is 80 pico F, and base emitter dynamic resistance is 1500 Ω, find the β cut-off frequency.
6. For given BJT, β=200. The applied input frequency is 20 Mhz and net internal capacitance is 100 pF. What is the CE short circuit current gain at β cut-off frequency?
7. If a C.E. stage has a load Rl and transconductance gm, what is the factor by which the capacitance between the base and the collector at the input side gets multiplied?
8. Consider that the phase shift of an RC coupled CE amplifier is 260°. Find the low frequency gain when the voltage gain of the transistor is -150.
9. In a simple follower stage, C2 is a parasitic capacitance arising due to the depletion region between the collector and the substrate. What is the value of C2?
10. Consider an RC coupled amplifier at low frequency. Internal voltage gain is -120. Find the voltage gain magnitude, when given that collector resistance = 1kΩ, load = 9kΩ, collector capacitance is 0. is 0.1μF, and input frequency is 20Hz.
11. Which parasitic capacitors are present at the collector terminal of the B.J.T.?
12. Given a MOSFET where gate to source capacitance is 300 pF and gate to drain capacitance is 500 pF. Calculate the gain bandwidth product if the transconductance is 30 mΩ-1.
13. If a C.E. stage has a load Rl and transconductance gm, what is the factor by which the capacitance between the base and the collector at the output side gets multiplied?
14. For a high frequency response of a simple C.E. stage with a transconductance of gm, what is Cin?
15. Gain bandwidth frequency is GBP= 3000 Mhz. The cut-off frequency is f=10Mhz. What is the CE short circuit current gain at the β cutoff frequency?
16. During high frequency applications of a B.J.T, which parasitic capacitors arise between the collector and the base?
17. If the transconductance of the B.J.T increases, the transit frequency ______
18. For a high frequency response of a simple C.E. stage with a transconductance of gm, what is Cout?
19. We have a capacitor from the collector to substrate, Ccs, which comes in parallel to the miller approximation of the capacitance from base to collector. The miller approximation defines the latter as Cµ*(1 + 1/gm*R2). Since capacitors gets added, when in parallel, the correct option is Ccs + Cµ*(1+ 1/gm*R2).
20. Which parasitic capacitors are present at the collector terminal of the B.J.T.?
21. If the B.J.T. is used as a follower, which capacitor experiences Miller multiplication?
22. For a cascode stage, with input applied to the C.B. stage, the input capacitance gets multiplied by a factor of ____
23. Which parasitic capacitors do not affect the frequency response of the C.E. stage, of the B.J.T.?
24. For a high frequency response of a simple C.E. stage with a transconductance of gm, what is Cin?
25. If 1/h12 = 4, for a C.E. stage- what is the value of the base to collector capacitance, after Miller multiplication, at the input side?

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