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Microwave Engineering: Microwave Semiconductor Devices
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Microwave Engineering: Microwave Semiconductor Devices
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25 Questions

1. The electrodes of a Gunn diode are made of:
2. MOSFETs can provide a power of several hundred watts when the devices are packaged in:
3. The number of modes of operation for n type GaAs is:
4. High-power circuits generally use higher values of:
5. Bipolar junction transistor is a ________ driven device.
6. In the hybrid model of a BJT, the capacitance Cc between the base and collector in the hybrid model is ignored.
7. The scattering parameter S11 for GaN HELMT increases with increase in frequency of operation
8. To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit.
9. BJTs are suitable for RF applications because:
10. ___________ is an amplifier constructed using a device whose reactance is varied to produce amplification.
11. The upper frequency limit of BJT depends on the:
12. Any semiconductor diode has a junction capacitance varying with reverse bias. If such a diode has microwave characteristics, it is called:
13. The cutoff frequency for operation of a varactor diode at a specific bias is given by:
14. The number of semiconductor layers in IMPATT diode is:
15. The resonant frequency of an IMPATT diode is given by:
16. The width of depletion region of a varactor diode ________with increase in reverse bias voltage.
17. When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential ______ is developed in that bulk device.
18. Parametric amplifiers find their application in long range RADAR and satellite ground stations.
19. If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:
20. Bipolar junction transistors have _______ 1/f characteristics hence making them suitable for oscillators.
21. When the electric field applied to GaAs specimen is less than the threshold electric field, the current in the material:
22. If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:
23. Gain of a parametric amplifier in terms of the frequencies involved in their operation is:
24. A PIN diode consists of ______number of semiconductor layers.
25. Under ideal conditions, when a PIN diode is used as a switch, the switch must have _______ insertion loss in the ON state.

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