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Optical Communication: Optical Sources
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Optical Communication: Optical Sources
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25 Questions

1. How many sections are included in a sampling grating distributed Bragg-reflector laser (SG-DBR)?
2. In a junction diode, an equilibrium condition occurs when ____________
3. The Lambertian intensity distribution __________ the external power efficiency by some percent.
4. The InGaAsP is emitting LEDs are realized in terms of restricted are ____________
5. To utilize _____________________ of SLDs at elevated temperatures, the use of thermoelectric coolers is important.
6. Mesa structured SLEDs are used ____________
7. The majority of the carriers in a p-type semiconductor are __________
8. How many types of hetero-junctions are available?
9. Which of these factors are critical in affecting the system performance in the case of coherent optical fiber transmission?
10. Fiber based lasers provide diffraction-limited power at higher levels than solid-state laser.
11. The internal quantum efficiency of LEDs decreasing _______________ with ________________ temperature.
12. The active layer composition must be adjusted if a particular center wavelength is desired.
13. DH surface emitter generally give ____________
14. The lasing line-width of Fox-smith resonator is ____________________
15. Longitudinal modes contribute only a single spot of light to the laser output.
16. Which devices are used to modulate the external cavity in order to achieve the higher switching speeds?
17. The amount of radiance in planer type of LED structures is ____________
18. What is done to create an extrinsic semiconductor?
19. How many techniques are used to tune monolithic integrated devices (lasers)?
20. An incandescent lamp is operating at a temperature of 1000K at an operating frequency of 5.2×1014 Hz. Calculate the ratio of stimulated emission rate to spontaneous emission rate.
21. In surface emitter LEDs, more advantage can be obtained by using ____________
22. Determine the 3 dB electrical bandwidth at 3 dB optical bandwidth Bopt of 56.2 MHz.
23. _______________ occurs as a result of the change in lasing frequency with gain.
24. Population inversion is obtained at a p-n junction by __________
25. The energy-level occupation for a semiconductor in thermal equilibrium is described by the __________

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