Consider an abrupt PN junction. Let V0 be the built in potential of this junction and VR be the reverse bias voltage applied. If the junction capacitance Cj is 1pF for V0+VR =1V, then for V0+VR =4V what will be the value of Cj?

Semiconductor-Diode topics include: pn junction qualitative theory, p-n junction diode, band structure of open circuited p-n junction, components in p-n junction diode, volt ampere characteristics, diode resistance and capacitances, pn diode switching times, breakdown and tunnel diodes, point contact diode, p-i-n diode and its characteristics. Here are some characteristics of a semiconductor diode: Unidirectional current flow: A semiconductor diode allows current to flow in only one direction, from anode to cathode. Low resistance: Diodes have low resistance to the flow of current. They... Show more

Semiconductor-Diode topics include: pn junction qualitative theory, p-n junction diode, band structure of open circuited p-n junction, components in p-n junction diode, volt ampere characteristics, diode resistance and capacitances, pn diode switching times, breakdown and tunnel diodes, point contact diode, p-i-n diode and its characteristics.

Here are some characteristics of a semiconductor diode:

Unidirectional current flow: A semiconductor diode allows current to flow in only one direction, from anode to cathode.
Low resistance: Diodes have low resistance to the flow of current. They have high resistance at one end and low resistance at the other end.
Current rise: The current rises to a stable voltage, also known as knee voltage, in a linear manner. After reaching this voltage, the current does not follow the linear motion.
Reverse current: The reverse current does not depend on the reverse voltage.
Voltage drop: A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V.

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