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For transistor action:(1) Base - emitter and collector regions should havesimilar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased andbase-collector junction is reverse based.(4) Both the emitter-base junction as well as the basecollector junction are forward biased.

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For transistor action:(1) Base - emitter and collector regions should havesimilar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased andbase-collector junction is reverse based.(4) Both the emitter-base junction as well as the basecollector junction are forward biased.






 
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